| 2004 | Stefan K. Estreicher and M. Sanati: Calculating the properties of defects in semiconductors at finite temperatures. In: D.J. Fisher, Defects and Diffusion in Semiconductors ¿ An Annual Retrospective VII . Trans Tech, 2004. 47-54 |
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| 2004 | Stefan K. Estreicher: First-Principles Theory of Copper in Silicon. In: A. Mesli, Copper interaction with Silicon based materials: a survey. Elsevier, 2004. 101-112 |
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| 2004 | M. Sanati, S.K. Estreicher, and M. Cardona:: Isotopic-dependence of the heat capacity of c-C, Si, and: An ab-initio calculation. In: Solid State Communications , 2004, 229-233 |
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| 2004 | M. Sanati and S.K. Estreicher: Specific heat and entropy of GaN. In: Journal of Physics: Condensed Matter , 2004, L327-L331 |
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| 2004 | J.L. McAfee, S.K. Estreicher, and He Ren: Structural and vibrational properties of N, N pairs, and {N,H} complexes in Si. In: Physical Review B , 2004, 165206-1-165206-10 |
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| 2004 | Stefan K. Estreicher, M. Sanati, D. West, and F. Ruymgaart: Thermodynamics of impurities in semiconductors. In: Physical Review B , 2004, 125209/1-125209/10 |
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| 2004 | Stefan K. Estreicher: Vibrational Dynamics for Defects in Semiconductors. In: Computational Modeling and Simulations of Materials III, Part A , 2004, 183-194 |
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| 2003 | D. West, S.K. Estreicher, S. Knack, and J. Weber: Copper interactions with H, O, and the self-interstitial in Si. In: Physical Review B, 2003, 035210-1-035210-7 |
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| 2003 | Stefan K. Estreicher: Defect Theory: an elusive state-of-the-art. In: Materials Today , 2003, 26-35 |
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| 2003 | Stefan K. Estreicher et al: Defect reactions of copper in silicon. Material Science Symposium. 2003. 290-294 |
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| 2003 | Stefan K. Estreicher: Dynamics of Hydrogen in Silicon. In: G.R. Myneni and S. Chattopadhyay, Hydrogen in Materials and Vacuum Systems. American Institutes of Physics, 2003. 40-48 |
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| 2003 | M. Sanati and S. K. Estreicher: First-Principles Thermodynamics for Defects in Silicon. In: Physica B , 2003, 630-636 |
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| 2003 | S.K. Estreicher, D. West, J. Goss, S. Knack, and J. Weber: First-principles calculations of pseudolocal vibrational modes: the case of Cu and Cu pairs in Si. In: Physical Review Letters, 2003, 035504-1-035504-4 |
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| 2003 | J.L. McAfee and S.K. Estreicher: Structural and vibrational properties of Cs and {Cs,H,H} complexes in Si. In: Physica B , 2003, 637-640 |
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| 2003 | M. Sanati and S.K. Estreicher: Vibrational entropies for defects in silicon. In: Solid State Communications, 2003, 181-185 |
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| 2002 | Stefan K. Estreicher, D. West, and P. Ordejón: Copper-defect and copper-impurity interactions in silicon. In: Solid State Phenomena , 2002, 341-348 |
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| 2002 | S.K. Estreicher, D. West, J.M. Pruneda, S. Knack, and J. Weber: Formation and properties of three copper pairs in silicon. In: MRS Proceedings, 2002, 421-426 |
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| 2002 | Stefan K. Estreicher: The H2 Molecule in Semiconductors: an Angel in GaAs, a Devil in Si. In: Acta Physica Polonica A, 2002, 403-418 |
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| 2002 | J.M. Pruneda, S.K. Estreicher, J. Junquera, J. Ferrer, and P. Ordejón: Vibrational frequencies of light impurities in silicon. In: Physical Review B, 2002, 075210.1-075210.8 |
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| 2001 | M. Gharaibeh, S.K. Estreicher, and P.A. Fedders: Dynamics of Si self-interstitials precipitation using the fast-diffusing I3 cluster. In: Physica B, 2001, 510-512 |
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| 2001 | M. Gharaibeh, S.K. Estreicher,P.A. Fedders, and P. Ordejón: Self-interstitial hydrogen complexes in Si
. In: Physical Review B, 2001, 235211.1-235211.7 |
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| 2001 | Stefan K. Estreicher, P.A. Fedders, and P. Ordejón: The Fascinating Dynamics of Defects in Silicon. In: Physica B, 2001, 1-7 |
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| 2001 | S.K. Estreicher, J.L. McAfee, P.A. Fedders, J.M. Pruneda, and P. Ordejón: The strange behavior of interstitial H2 molecules in Si and GaAs. In: Physica B, 2001, 202-205 |
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| 2001 | J.M. Pruneda, J. Junquera, J. Ferrer, P. Ordejón, and S.K. Estreicher: Vibrational Properties of H-related defects in Si. In: Physica B, 2001, 147-150 |
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